PART |
Description |
Maker |
GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) 16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode) Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
GS8170LW36AC-300I GS8170LW72AC-300 GS8170LW36AC-33 |
512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 18Mb ??x1Lp CMOS I/O Late Write SigmaRAM 18Mb x1Lp CMOS I/O Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.1 ns, PBGA209 18Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
GS815018AB-250 GS815018AGB-250 GS815036AB-250 GS81 |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.4 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.5 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119 512K X 36 LATE-WRITE SRAM, 1.4 ns, PBGA119
|
GSI Technology, Inc.
|
MCM69R738AZP7R MCM69R738AZP5 MCM69R738A MCM69R738A |
4M Late Write 2.5 V I/O
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
K7Z167285A |
256Kx72 Double Late Write SigmaRAMData Sheet
|
Samsung Electronic
|
HM64YGB36100 HM64YGB36100BP-33 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Motorola Mobility Holdings, Inc.
|
GS8170DW72C-200 GS8170DW72C-300I GS8170DW36C-333 G |
256K X 72 STANDARD SRAM, 1.8 ns, PBGA209 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|
CXK77B1840GB |
4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization) From old datasheet system
|
Sony
|
CXK77B1840AGB CXK77B3640AGB |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
|
Sony
|
GS8330LW36C-250 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb Common I/O SigmaRAMs 36Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|